This article will review new molecular targets for the treatment

This article will review new molecular targets for the treatment of CRC and discuss possible implications for clinical therapy. (C) 2010 Published by Elsevier Ltd.”
“The aim of this study was to investigate the effects of IAA and ABA in the shoot-to-root regulation of the expression of the main Fe-stress physiological root responses in cucumber plants subjected to shoot Fe functional deficiency. Changes in the expression of the genes CsFRO1, CsIRT1, CsHA1 and CsHA2 (coding

for Fe(III)-chelate reductase (FCR), the Fe(II) transporter and H(+)-ATPase, respectively) and in the enzyme activity of FCR and the acidification capacity were measured. We studied first the ability of exogenous applications AC220 of IAA and ABA FDA approved Drug Library concentration to induce these Fe-stress root responses in plants grown in Fe-sufficient conditions. The results showed that IAA was able to activate these responses at the transcriptional and functional levels, whereas the results with ABA were less conclusive. Thereafter, we explored the role

of IAA in plants with or without shoot Fe functional deficiency in the presence of two types of IAA inhibitors, affecting either IAA polar transport (TIBA) or IAA functionality (PCIB). The results showed that IAA is involved in the regulation at the transcriptional and functional levels of both Fe root acquisition 7-Cl-O-Nec1 mw (FCR, Fe(II) transport) and rhizosphere acidification (H(+)-ATPase), although through different, and probably complementary, mechanisms. These results suggest that IAA is involved in the shoot-to-root regulation of the expression of Fe-stress physiological root responses. (C) 2011 Elsevier Masson SAS. All rights reserved.”
“The optical efficiency

of GaN-based multiple quantum well (MQW) and light emitting diode (LED) structures grown on Si(111) substrates by metal-organic vapor phase epitaxy was measured and compared with equivalent structures on sapphire. The crystalline quality of the LED structures was comprehensively characterized using x-ray diffraction, atomic force microscopy, and plan-view transmission electron microscopy. A room temperature photoluminescence (PL) internal quantum efficiency (IQE) as high as 58% has been achieved in an InGaN/GaN MQW on Si, emitting at 460 nm. This is the highest reported PL-IQE of a c-plane GaN-based MQW on Si, and the radiative efficiency of this sample compares well with similar structures grown on sapphire. Processed LED devices on Si also show good electroluminescence (EL) performance, including a forward bias voltage of similar to 3.5 V at 20 mA and a light output power of 1 mW at 45 mA from a 500 x 500 mu m(2) planar device without the use of any additional techniques to enhance the output coupling.

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