The experimental procedures are presented in Figure 1b,c. INCB028050 solubility dmso Two bismuth wire samples were employed: a 521-nm-diameter nanowire for evaluation of the electrical contact to establish a suitable technique for the fabrication of ohmic contact electrodes (experiment 1), and a 4-μm-diameter microwire for Hall measurement to determine whether Hall measurements could be successfully performed with this technique and compared with the results

for the bulk (experiment 2). Figure 1 Experimental procedure for the fabrication of electrodes and evaluation of bismuth nano- and microwires. (a) SN-38 concentration Configuration for Hall measurements of a bismuth nanowire. (b) Procedure for the fabrication and evaluation of electrodes on a 521-nm-diameter bismuth nanowire. The two-wire resistance was measured before FIB processing, and the I-V relationship and two- and four-wire check details resistance were measured after FIB processing. (c) Procedure for the fabrication of electrodes for Hall measurements.

FIB processing For experiment 1, both edges of the 0.5-mm-diameter and 2.54-mm-long quartz template were polished to obtain good electrical and thermal contacts with the bismuth nanowire. Metal thin-film layers of Ti (100 nm) and Cu (1,000 nm) were then deposited on both polished end surfaces of the nanowire and template using an ion plating method. The resistance was measured using the two-wire method with an alternating current (AC) and a lock-in amplifier at precisely controlled (<1 mK) temperatures from 4.2 to 300 K achieved using a Gifford-McMahon (GM) cryocooler [34, 35]. In the next step of the experiment, one side surface of the quartz template was removed by polishing until just before the bismuth nanowire was exposed, as shown in Figure 1b. The distance between the surface of the bismuth nanowire and the quartz template was less than 1 μm, as measured with Sitaxentan a laser microscope. After removal of the quartz template, the sample was attached with adhesive onto

a doped silicon (Si) wafer to prevent charge-up during FIB processing, with the polished surface upward. Ti (100 nm)/Cu (200 nm) thin-film layers were then deposited on the polished surface. The thin-film layers acted as electrodes and helped to prevent charge-up during FIB processing because the majority of the sample was quartz. This sample was installed into a dual-beam FIB-scanning electron microscope (SEM) apparatus (NB5000, Hitachi High-Technologies Ltd., Tokyo, Japan), and six electrical contacts were fabricated by FIB processing. Figure 2 shows schematic diagrams of the FIB processing used to prepare electrodes on the bismuth nanowires for the four-wire resistance and Hall measurements. The width and length of the quartz template were 0.49 and 2.34 mm, respectively. Eight parts of the electrodes are labeled with 1 to 6, and A and B in Figure 2a.