Figure 6 PL, EL, and EPL spectra of THH-VCSOA at T  = 300 K. Figure 7 Gain versus incident power using various applied voltages at T  = 300 K. Conclusions The operation of bidirectional THH-VCSOA-based Ga0.35In0.65 N0.02As0.08 at a wavelength of 1,280 nm has been demonstrated. Maximum optical gain of about 5 dB is observed at V app = 80 V and at T = 300 K. Therefore, we conclude that the THH-VCSOA device is a bidirectional field-effect light-emitting and light-absorbing heterojunction and can work as an optical amplifier and wavelength converter in the 1.3-μm wavelength regime. The performance of the device can be improved by reducing the dimensions of the device, Selleck KU55933 so that high electrical

fields can be reached by the application of small voltages. Acknowledgements FAI Chaqmaqchee is grateful to the Ministry of Higher Education and Scientific Research of IRAQ for their financial support during her study at the University of Essex. We are grateful

to the Institute for Systems Based on Optoelectronics and Microtechnology in Madrid for their assistance with the device fabrication. The authors are also grateful to Professor Mark Hopkinson and Dr. Maxim Hughes for growing the structures. Finally, we would like to thank the COST Action MP0805 for the collaborative research. References 1. Bjorlin ES, Geske J, Bowers JE: Optically preamplified receiver at 10 Gbit/s using vertical-cavity SOA. Elect Lett 2001, 37:1474–1475.CrossRef 2. selleck inhibitor Suzuki N, Ohashi M, Nakamura M: A proposed vertical-cavity optical repeater for optical inter-board Belnacasan clinical trial connections. IEEE Photo Technol Lett 1997, 9:1149–1151.CrossRef 3. Bouche N, Corbett B, Kuszelewicz R, Raj R: selleck compound Vertical-cavity amplifying photonic switch at 1.5 μm. Photon Technol Lett 1996, 8:1035–1037.CrossRef

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