By tuning the film thickness and annealing temperature, the density

and the diameters of the holes can be readily controlled. With Ag mesh patterned as catalyst on silicon substrate, fabrication of vertical (100) SiNW arrays with controlled morphologies were achieved, as shown in Figure 4. It is evident that the morphology of SiNWs matches well with the shape of the corresponding holes on the Ag films. It is interesting selleck chemicals llc that not only circular (Figure 4b,c) but also quadrate (Figure 4a) cross-sectional SiNWs can be formed using this method. The slight mismatch between the Ag films and the corresponding SiNWs can be attributed to the gradual erosion of the ultrathin Ag film during the etching [18]. Figure 4 SEM images of films with different thicknesses and annealing temperatures and corresponding etching results. (a) The 11-nm-thick Ag film on Si substrate annealed at 120°C for 10 min. (b) The 12-nm-thick Ag film on Si substrate annealed at 160°C for 10 min. (c) The 13-nm-thick Ag film on Si substrate annealed at 175°C for 10 min. Planar and cross-sectional

images of their corresponding etched substrate: (d, g) corresponding to (a), (e, h) corresponding to (b), and (f, i) corresponding to (c). Another important parameter of the SiNW arrays is the length, which can be controlled by varying the etching time. Figure 5b,c,d shows the cross-sectional scanning electron microscope (SEM) images of SiNW arrays fabricated with etching times of 5, 10, and 20 min, respectively. The Ag film is 14 nm and annealed at 150°C for

10 min. As a result, nanowires with lengths of about 0.5 μm, about 1 μm, and about Tariquidar molecular weight 2 μm are achieved, respectively. The length of the nanowires shows good linear relationship with the duration of the etching time. The statistical analysis (Figure 5e) shows the good diameter distribution of the as-fabricated SiNWs. Here, the tapered morphology of the nanowires resulted from the gradual Ag dissolution-induced hole size increase. Figure 5 SEM images of plane-view SiNW arrays, cross-sectional SEM images of the SiNWs, and statistical distribution. (a) SEM images of plane-view SiNW arrays achieved with the catalysis of a 14-nm-thick Ag film annealed at 150°C for 10 min and cross-sectional SEM images of the SiNWs etched for (b) 5 min Methocarbamol (nanowire length 0.5 μm), (c) 10 min (1 μm), and (d) 20 min (2 μm). All scale bars are 500 nm. (e) The statistical distribution for the average diameters of the corresponding SiNWs. Fabrication of SiNH arrays utilizing Ag SYN-117 ic50 nanoparticles When the metal film is annealed at higher temperature, the continuous thin Ag film finally transforms into isolated nanoparticles (Figure 6). As shown in Figure 6a,c, the Ag particles are semispherical and exhibit good distribution and uniformity. The parameters of the nanoparticles can be tuned by varying the film thickness and annealing temperature.